期刊論文
| 學年 | 102 |
|---|---|
| 學期 | 2 |
| 出版（發表）日期 | 2014-03-14 |
| 作品名稱 | Natural substrate lift-off technique for vertical light-emitting diodes |
| 作品名稱（其他語言） | |
| 著者 | Lee, Chia-Yu; Lan, Yu-Pin; Tu, Po-Min; Hsu, Shih-Chieh; Lin, Chien-Chung; Kuo, Hao-Chung; Chi, Gou-Chung; Chang, Chun-Yen |
| 單位 | 淡江大學化學工程與材料工程學系 |
| 出版者 | Japan: Japan Society of Applied Physics |
| 著錄名稱、卷期、頁數 | Applied Physics Express 7(4), 042103(4 pages) |
| 摘要 | Hexagonal inverted pyramid (HIP) structures and the natural substrate lift-off (NSLO) technique were demonstrated on a GaN-based vertical light-emitting diode (VLED). The HIP structures were formed at the interface between GaN and the sapphire substrate by molten KOH wet etching. The threading dislocation density (TDD) estimated by transmission electron microscopy (TEM) was reduced to 1 × 108 cm−2. Raman spectroscopy indicated that the compressive strain from the bottom GaN/sapphire was effectively released through the HIP structure. With the adoption of the HIP structure and NSLO, the light output power and yield performance of leakage current could be further improved. |
| 關鍵字 | |
| 語言 | en |
| ISSN | 1882-0786 |
| 期刊性質 | 國外 |
| 收錄於 | SCI |
| 產學合作 | |
| 通訊作者 | Hsu, Shih-Chieh; Lan, Yu-Pin |
| 審稿制度 | 是 |
| 國別 | JPN |
| 公開徵稿 | |
| 出版型式 | ,電子版,紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/100086 ) |