期刊論文
| 學年 | 101 |
|---|---|
| 學期 | 2 |
| 出版（發表）日期 | 2013-05-01 |
| 作品名稱 | A Stress Analysis of Transferred Thin-GaN Light-Emitting Diodes Fabricated by Au-Si Wafer Bonding |
| 作品名稱（其他語言） | |
| 著者 | Lin, Bo-Wen; Wu, Nian-Jheng; Wu, Yew Chung Sermon; Hsu, S. C. |
| 單位 | 淡江大學化學工程與材料工程學系 |
| 出版者 | Piscataway: Institute of Electrical and Electronics Engineers |
| 著錄名稱、卷期、頁數 | Journal of Display Technology 9(5), pp.371-376 |
| 摘要 | Thin-GaN light-emitting diodes were fabricated by Au-Si wafer bonding and laser lift-off. The relaxation process of the thermal strain in the transferred GaN films on a Si substrate was studied by varying the bonding film thickness of the Au over a wide range from 7 µm to 40 µm. The transferred GaN films were found to be strained by the biaxial compressive stress. A 10 µm Au bonding layer thickness was proven to have the lowest residual compressive stress, and the complete compressive stress variation throughout the entire thin-GaN fabrication process is discussed. Finally, we changed the biaxial in-plane stress of the transferred GaN thin film by controlling the bonding conditions, including the bonding layer thickness and the bonding temperature. |
| 關鍵字 | |
| 語言 | en_US |
| ISSN | 1551-319X 1558-9323 |
| 期刊性質 | 國外 |
| 收錄於 | SCI |
| 產學合作 | |
| 通訊作者 | |
| 審稿制度 | 是 |
| 國別 | USA |
| 公開徵稿 | |
| 出版型式 | 電子版,紙本, |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/92101 ) |