期刊論文
| 學年 | 99 |
|---|---|
| 學期 | 2 |
| 出版（發表）日期 | 2011-07-01 |
| 作品名稱 | Optical properties of self assembled GaN polarity inversion domain
 boundary |
| 作品名稱（其他語言） | |
| 著者 | Liu, M. C.; Cheng, Y. J.; Chang, J. R.; Hsu, S. C.; Chang, C. Y. |
| 單位 | 淡江大化學工程與材料工程學系 |
| 出版者 | College Park: American Institute of Physics |
| 著錄名稱、卷期、頁數 | Applied Physics Letters 99(2), 021103(3pages) |
| 摘要 | We report the fabrication of GaN lateral polarity inversion heterostructure with self assembled crystalline inversion domain boundaries (IDBs). The sample was fabricated by two step molecular-beam epitaxy (MBE) with microlithography patterning in between to define IDBs. Despite the use of circular pattern, hexagonal crystalline IDBs were self assembled from the circular pattern during the second MBE growth. Both cathodoluminescent (CL) and photoluminescent (PL) measurements show a significant enhanced emission at IDBs and in particular at hexagonal corners. The ability to fabricate self assembled crystalline IDBs and its enhanced emission property can be useful in optoelectronic applications. |
| 關鍵字 | |
| 語言 | en |
| ISSN | 0003-6951; 1077-3118 |
| 期刊性質 | 國外 |
| 收錄於 | SCI |
| 產學合作 | |
| 通訊作者 | Cheng, Y. J. |
| 審稿制度 | |
| 國別 | USA |
| 公開徵稿 | |
| 出版型式 | 紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/62524 ) |