Electrochemical etching induced high-valence cobalt with defects site for boosting electrochemical water splitting
學年 111
學期 2
出版（發表）日期 2023-03-02
作品名稱 Electrochemical etching induced high-valence cobalt with defects site for boosting electrochemical water splitting
作品名稱（其他語言）
著者 26. H. Gao, J. Liu, Z. Zhang, Y. Lu, R. Chen, Y. C. Huang, C. Xie, M. Qiu, M. Qiu, T. Wu, J. Wang, Y. Jiang, C. L. Dong, Z. Kong, and S. Wang
單位
出版者
著錄名稱、卷期、頁數 Chem. Eng. J 2023, 463, 142224
摘要 The active origin of the high-valence-state enhance the oxygen evolution reaction performance, which still lacks confident evidence, especially on how to delay the loss of activity by retaining the valence dynamically stable. Herein, to demonstrate the role of pure electrochemistry on the evolution process is first detailed explored. The electrochemical operation is found benignly for building the high-valence cobalt (Co) on the surface and enhancing the degree of the weakened-crystalline structure due to the selenium (Se) leaching. The anodized CoSe2 (A-CoSe2) with the above structures was mainly linked to high intrinsic activity (η = 254 mV@10 mA cm−2) and durability (120 h), as well as a high-current (0.5 A cm−2, 30 h), withstand performance in anion exchange membrane (AEM) water electrolyzer among best Co-based catalysts. The high durability unravels the increasingly weakly crystalline structure was benign for the dynamical retainment of the metallic Co-defect structure and high-valence active sites.
關鍵字 High-valence active sitesCo-defect structureIntrinsic activityHigh durabilityOxygen evolution reaction
語言 en
ISSN 1385-8947; 1873-3212
期刊性質 國外
收錄於 SCI
產學合作
通訊作者
審稿制度 否
國別 NLD
公開徵稿
出版型式 ,電子版
相關連結

機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/125727 )