Atomically thin metallic Si and Ge allotropes with high Fermi velocities
學年 111
學期 2
出版（發表）日期 2023-03-09
作品名稱 Atomically thin metallic Si and Ge allotropes with high Fermi velocities
作品名稱（其他語言）
著者 Chin-En Hsu; Yung-Ting Lee; Chieh-Chun Wang; Chang-Yu Lin; Yukiko Yamada-Takamura; Taisuke Ozaki; Chi-Cheng Lee
單位
出版者
著錄名稱、卷期、頁數 Phys. Rev. B 107, 115410
摘要 Silicon and germanium are well-known materials used to manufacture electronic devices for integrated circuits, but they themselves are not considered as promising options for interconnecting the devices due to their semiconducting nature. We have discovered that both Si and Ge atoms can form unexpected metallic monolayer structures with a square lattice which are more stable than the semimetallic silicene and germanene, respectively, in line with the energetically more favored dumbbell and wavy-bilayer structures. More importantly, these two-dimensional allotropes of Si and Ge host Dirac fermions with Fermi velocities superior to those in graphene, indicating that the metal wires needed in the silicon-based integrated circuits can be made of the Si atom itself without incompatibility, allowing for all-silicon-based integrated circuits.
關鍵字
語言 en_US
ISSN 2469-9950;2469-9969
期刊性質 國外
收錄於 SCI
產學合作
通訊作者
審稿制度 是
國別 USA
公開徵稿
出版型式 ,電子版
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