Uniaxial Strain Dependence on Angle-Resolved Optical Second Harmonic Generation from a Few Layers of Indium Selenide
學年 111
學期 2
出版（發表）日期 2023-02-16
作品名稱 Uniaxial Strain Dependence on Angle-Resolved Optical Second Harmonic Generation from a Few Layers of Indium Selenide
作品名稱（其他語言）
著者 Zi-Yi Li, Hao-Yu Cheng, Sheng-Hsun Kung, Hsuan-Chun Yao, Christy Roshini Paul Inbaraj, Raman Sankar, Min-Nan Ou, Yang-Fang Chen, Chi-Cheng Lee, and Kung-Hsuan Lin
單位
出版者
著錄名稱、卷期、頁數 Nanomaterials 13(4), p.750
摘要 Indium selenide (InSe) is an emerging van der Waals material, which exhibits the potential to serve in excellent electronic and optoelectronic devices. One of the advantages of layered materials is their application to flexible devices. How strain alters the electronic and optical properties is, thus, an important issue. In this work, we experimentally measured the strain dependence on the angle-resolved second harmonic generation (SHG) pattern of a few layers of InSe. We used the exfoliation method to fabricate InSe flakes and measured the SHG images of the flakes with different azimuthal angles. We found the SHG intensity of InSe decreased, while the compressive strain increased. Through first–principles electronic structure calculations, we investigated the strain dependence on SHG susceptibilities and the corresponding angle-resolved SHG pattern. The experimental data could be fitted well by the calculated results using only a fitting parameter. The demonstrated method based on first–principles in this work can be used to quantitatively model the strain-induced angle-resolved SHG patterns in 2D materials. Our obtained results are very useful for the exploration of the physical properties of flexible devices based on 2D materials.
關鍵字 second harmonic generation;strain;InSe;first–principles calculation
語言 en
ISSN 2079-4991
期刊性質 國外
收錄於 SCI
產學合作
通訊作者
審稿制度 是
國別 CHE
公開徵稿
出版型式 ,電子版
SDGS 可負擔的潔淨能源,產業創新與基礎設施