Bandgap Shrinkage and Charge Transfer in 2D Layered SnS2 Doped with V for Photocatalytic Efficiency Improvement
學年 110
學期 1
出版（發表）日期 2021-11-20
作品名稱 Bandgap Shrinkage and Charge Transfer in 2D Layered SnS2 Doped with V for Photocatalytic Efficiency Improvement
作品名稱（其他語言）
著者 Hsueh, Hung-chung
單位
出版者
著錄名稱、卷期、頁數 Small 18(2),　2105076
摘要 Effects of electronic and atomic structures of V-doped 2D layered SnS2 are studied using X-ray spectroscopy for the development of photocatalytic/photovoltaic applications. Extended X-ray absorption fine structure measurements at V K-edge reveal the presence of VO and VS bonds which form the intercalation of tetrahedral OVS sites in the van der Waals (vdW) gap of SnS2 layers. X-ray absorption near-edge structure (XANES) reveals not only valence state of V dopant in SnS2 is ≈4+ but also the charge transfer (CT) from V to ligands, supported by V Lα,β resonant inelastic X-ray scattering. These results suggest V doping produces extra interlayer covalent interactions and additional conducting channels, which increase the electronic conductivity and CT. This gives rapid transport of photo-excited electrons and effective carrier separation in layered SnS2. Additionally, valence-band photoemission spectra and S K-edge XANES indicate that the density of states near/at valence-band maximum is shifted to lower binding energy in V-doped SnS2 compare to pristine SnS2 and exhibits band gap shrinkage. These findings support first-principles density functional theory calculations of the interstitially tetrahedral OVS site intercalated in the vdW gap, highlighting the CT from V to ligands in V-doped SnS2.
關鍵字 band-gap shrinkage;charge transfer;density functional theory;resonant inelastic X-ray scattering;V-doped 2D layered SnS 2;X-ray absorption
語言 en_US
ISSN 1613-6829
期刊性質 國外
收錄於 SCI
產學合作
通訊作者 Hung-Chung Hsueh(薛宏中), Jau-Wern Chiou, Way-Faung Pong
審稿制度 是
國別 DEU
公開徵稿
出版型式 ,電子版,紙本
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