Microscopic origin of the π states in epitaxial silicene | |
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學年 | 102 |
學期 | 1 |
出版(發表)日期 | 2014-01-16 |
作品名稱 | Microscopic origin of the π states in epitaxial silicene |
作品名稱(其他語言) | |
著者 | A. Fleurence; Y. Yoshida; C.-C. Lee; T. Ozaki; Y. Yamada-Takamura; Y. Hasegawa |
單位 | |
出版者 | |
著錄名稱、卷期、頁數 | Appl. Phys. Lett. 104, 021605 |
摘要 | We investigated the electronic properties of epitaxial silicene on ZrB2(0001) thin film grown on Si(111) by means of low-temperature scanning tunneling spectroscopy and density functional theory calculations. The position of silicon atoms and thus, the localization of the valence and conduction states were deducted from the comparison of the spectra and the computed local density of states. We point out the strong contribution of pz orbitals of specific atoms to those states which indicates the π character of the conduction and valence bands. A clear correlation between hybridization of the orbitals of the Si atoms and the buckling was evidenced. |
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語言 | en_US |
ISSN | |
期刊性質 | 國外 |
收錄於 | SCI |
產學合作 | |
通訊作者 | |
審稿制度 | 是 |
國別 | USA |
公開徵稿 | |
出版型式 | ,電子版 |
相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/117352 ) |