Nano-Oxide-Layer-Induced Magnetic Properties of Ir-Mn-Based Spin-Valve Field Sensors
學年 105
學期 1
出版（發表）日期 2016-09-15
作品名稱 Nano-Oxide-Layer-Induced Magnetic Properties of Ir-Mn-Based Spin-Valve Field Sensors
作品名稱（其他語言）
著者 Srivastava, M.K.; Huang, K.-F.; Huang, H.-H.; Weng, R.; Pong, W.-F.; Lai, C.-H.
單位
出版者
著錄名稱、卷期、頁數 IEEE Magnetics Letters 7, 3107005
摘要 We report modification of the magnetic properties of Ir-Mn-based bottom spin-valve devices after insertion of a thin Fe-based nano-oxide layer (NOL). A sheet film with layer sequence Si/Ta/Pt/Ir20Mn80/Co/Ru/Co/FeOx/Co/Cu/Co/ Ni80Fe20/Ta was grown to fabricate the devices. Magnetization, magneto-transport, angle-dependent resistance, and Fe L3,2-edge X-ray absorption spectroscopy were performed on the sheet film and microfabricated devices. The sheet film and devices had in-plane orthogonal interlayer coupling between the Co layers across the NOL. The sensing capability of the devices was tested and it appears that the NOL affected the free layer and hence the sensing direction of the devices. However, stray fields originating from the reference layer may also influence the free layer. With careful optimization of the NOL and layer structure, the devices may be used as two-axis field sensors after a relatively simple, single-step annealing process.
關鍵字 Couplings;Sensors;Magnetic field measurement;Films;Annealing;Magnetic separation
語言 en_US
ISSN
期刊性質 國外
收錄於 SCI
產學合作
通訊作者
審稿制度 否
國別 GBR
公開徵稿
出版型式 ,電子版,紙本
相關連結

機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/115548 )