Polarization photoelectric conversion in layered GeS
學年 106
學期 1
出版（發表）日期 2018-01-09
作品名稱 Polarization photoelectric conversion in layered GeS
作品名稱（其他語言）
著者 Hung-Chung Hsueh; Jia-Xuan Li; Ching-Hwa Ho
單位
出版者
著錄名稱、卷期、頁數 Advanced Optical Materials 6(4), 1701194(11 pages)
摘要 Polarization photovoltaic effect is a unique character for an energy mate-rial with specific in-plane anisotropy. Especially, if the energy material has a direct bandgap close to 1.6 eV, it will efficiently absorb full sunlight spectrum with specific axial polarization. In this study, polarized microtransmittance measurements of GeS multilayer with polarization angles ranging from θ = 0° (E || a) [through 90° (E || b)] to θ = 180° (E || a) have been studied near band edge. The polarized absorption edge follows a sinusoidal variation of E(θ) = 1.6 + 0.05⋅|sin(θ)| eV with respect to the angle change of the polarized absorption spectra. This anisotropic optical response is well reproduced by first-principles calculations based on a combined Green’s function technique, the GW–Bethe–Salpeter equation (BSE) approach. To characterize highly anisotropic band structure of layered GeS, polarized thermoreflectance measurement and first-principles quasiparticle band-structure calculations are also carried out. The interband transitions belonging to E || a and E || b polari-zations are respectively identified. The polarized surface photovoltaic effects of a GeS Schottky solar cell are also tested. The special in-plane optical anisot-ropy (along a and perpendicular to the a axis) renders GeS owning highly bi-axial responsivity with respect to the c-plane photoelectric conversion.
關鍵字 layered materials;band structure;GeS;in‐plane anisotropy;photoelectric conversion;polarized absorption
語言 en
ISSN 2195-1071
期刊性質 國外
收錄於 SCI Scopus
產學合作
通訊作者 Hung-Chung Hsueh; Ching-Hwa Ho
審稿制度 是
國別 DEU
公開徵稿
出版型式 ,電子版,紙本
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