| Carrier recombination dynamics in electronically coupled multi-layer InAs/GaAs quantum dots | |
|---|---|
| 學年 | 106 |
| 學期 | 2 |
| 出版（發表）日期 | 2018-03-01 |
| 作品名稱 | Carrier recombination dynamics in electronically coupled multi-layer InAs/GaAs quantum dots |
| 作品名稱（其他語言） | |
| 著者 | Antaryami Mohantaa; Der-Jun Jang; Shu-Kai Lu; Dah-Chin Ling; J.S. Wang; R.-B. Chen; F.-C. Chuang |
| 單位 | |
| 出版者 | |
| 著錄名稱、卷期、頁數 | Journal of Luminescence, 195, 109 (2018) |
| 摘要 | Optical properties of multi-layer InAs/GaAs quantum dots (QDs) with different GaAs spacer layer thicknesses (dGaAs) of 20, 15 and 10 nm are investigated by time-integrated and time-resolved photoluminescence (PL) spectroscopy. The energy spacing between ground and excited state is observed to be decreased with decrease in dGaAs and increased with increase in excitation intensity. The rate of carrier capture and energy relaxation in QDs is found to be slower at excitation energy of 3.06 eV than that at 1.53 eV which is attributed to intervalley scattering in GaAs. The effect of intervalley scattering process in GaAs on decay time is negligible for dGaAs of 20 nm and is prominent for dGaAs ≤ 15 nm. |
| 關鍵字 | Photoluminescence;InAs/GaAs quantum dots;Carrier dynamics;Phonon bottleneck effect |
| 語言 | en_US |
| ISSN | 0022-2313 |
| 期刊性質 | 國外 |
| 收錄於 | SCI |
| 產學合作 | |
| 通訊作者 | Der-Jun Jang |
| 審稿制度 | 是 |
| 國別 | NLD |
| 公開徵稿 | |
| 出版型式 | ,電子版,紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/112435 ) |
| SDGS | 產業創新與基礎設施 |
GoogleAnalytics