Energy relaxation dynamics in vertically coupled multi-stacked InAs/GaAs quantum dots
學年 105
學期 1
出版（發表）日期 2017-01-19
作品名稱 Energy relaxation dynamics in vertically coupled multi-stacked InAs/GaAs quantum dots
作品名稱（其他語言）
著者 Antaryami Mohanta; Der-Jun Jang; Shu-Kai Lu; Dah-Chin Ling; J. S. Wang
單位
出版者
著錄名稱、卷期、頁數 Applied Physics Letters 110(3), 033107(4 pages)
摘要 Effect of GaAs spacer layer thickness (dGaAs) on carrier capture, and the relaxation process is studied in multi-stacked InAs/GaAs quantum dots by photoluminescence and time-resolved photoluminescence. Auger scattering is the dominating process for carrier relaxation above dGaAs of 15 nm. At dGaAs of 10 nm, the carrier relaxation process is faster due to the combined effect of both single longitudinal optical phonon and Auger scattering resulting in higher photoluminescence intensity. The photoluminescence rise time corresponding to carrier capture and relaxation in quantum dots is longer at 3.06 eV excitation than that at 1.53 eV due to the effect of intervalley scattering in GaAs.
關鍵字
語言 en_US
ISSN 0003-6951;1077-3118
期刊性質 國外
收錄於 SCI
產學合作
通訊作者
審稿制度 是
國別 USA
公開徵稿
出版型式 ,電子版,紙本
相關連結

機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/109426 )