Vibrational properties of the layered semiconductor germanium sulfide under hydrostatic pressure: Theory and experiment
學年 84
學期 2
出版（發表）日期 1996-06-01
作品名稱 Vibrational properties of the layered semiconductor germanium sulfide under hydrostatic pressure: Theory and experiment
作品名稱（其他語言）
著者 Hsueh, H. C.; M. C. Warren; H. Vass; G. J. Ackland; S. J. Clark; J. Crain
單位
出版者
著錄名稱、卷期、頁數 Phys. Rev. B 53(22), pp.14806-14817
摘要 The structural and vibrational properties of the prototypical layered semiconductor germanium sulfide (GeS) have been studied under pressure using a combination of high-resolution x-ray powder diffraction, Raman scattering, and ab initio simulation. The theoretically and experimentally determined pressure response of the static and dynamical properties are in good agreement with each other. No structural phase transformation is found up to 94 kbar. Inspection of the calculated eigenvectors of zone center phonons at several pressures indicates that the validity of the rigid-layer mode approximation is appropriate only at near-ambient pressure conditions and breaks down under compression.
關鍵字
語言 en
ISSN
期刊性質 國外
收錄於
產學合作
通訊作者
審稿制度 否
國別 USA
公開徵稿
出版型式 ,電子版,紙本
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