Nonlinear bandgap opening behavior of BN co-doped graphene
學年 105
學期 1
出版（發表）日期 2016-10-01
作品名稱 Nonlinear bandgap opening behavior of BN co-doped graphene
作品名稱（其他語言）
著者 Wang, Bo-Yao; Wang, Hsiao-Tsu; Chen, Ling-Yen; Hsueh, Hung-Chung; Li, Xin; Guo, Jing-Hua; Luo, Yi; Chiou, Jau-Wern; Wang, Wei-Hua; Wang, Po-Hsiang; Chen, Kuei-Hsien; Chen, Yen-Chih; Chen, Li-Chyong; Chen, Chia-Hao; Wang, Jian; Pong, Way-Faung
單位
出版者
著錄名稱、卷期、頁數 Carbon 107, pp.857-864
摘要 We have demonstrated a nonlinear behavior for the bandgap opening of doped graphene by controlling the concentration of B and N co-dopants. X-ray absorption and emission spectra reveal that the bandgap increases from 0 to 0.6 eV as the concentration of BN dopants is increased from 0 to 6%, while the bandgap closes when the doping concentration becomes 56%. This nonlinear behavior of bandgap opening of the BN-doped graphene depending on the BN concentrations is consistent with the valence-band photoemission spectroscopic measurements. The spatially resolved B, N and C K-edge scanning transmission x-ray microscopy and their x-ray absorption near-edge structure spectra all support the scenario of the development of h-BN-like domains at high concentrations of BN. Ab initio calculation, by taking into account of the strong correlation between the bandgap and the geometry/concentration of the dopant, has been performed with various BN-dopant nano-domains embedded in the graphene monolayer to verify the unique bandgap behavior. Based on the experimental measurements and ab initio calculation, we propose the progressive formation of a phase-separated zigzag-edged BN domain from BN quantum dots with increasing BN-dopant concentration to explain the extraordinary nonlinear behavior of bandgap opening of BN-doped graphene sheets. This study reveals a new way to engineer the bandgap of low-dimensional systems.
關鍵字
語言 en_US
ISSN 0008-6223
期刊性質 國外
收錄於 SCI
產學合作
通訊作者 Hsueh, Hung-Chung; Pong, Way-Faung
審稿制度 是
國別 USA
公開徵稿
出版型式 ,電子版,紙本
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