Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes
學年 98
學期 1
出版（發表）日期 2009-12-01
作品名稱 Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes
作品名稱（其他語言）
著者 Lo, M.-H.; Tu, P.-M.; Wang, C.-H.; Cheng, Y.-J.; Hung, C.-W.; Hsu, S.-C.; Kuo, H.-C.; Zan, H.-W.; Wang, S.-C.; Chang, C.-Y.; Liu, C.-M.
單位 淡江大學化學工程與材料工程學系
出版者 American Institute of Physics
著錄名稱、卷期、頁數 Applied Physics Letters 95(21), 211103
摘要 A defect selective passivation method to block the propagation of threading dislocations in GaN epitaxial growth is demonstrated. The defect selective passivation is done by using defect selective chemical etching to locate defect sites, followed by silicon oxide passivation of the etched pits, and epitaxial over growth. The threading dislocation density in the regrown epilayer is significantly improved from 1×109 to 4×107 cm-2. The defect passivated epiwafer is used to grow light emitting diode and the output power of the fabricated chip is enhanced by 45% at 20 mA compared to a reference one without using defect passivation.
關鍵字
語言 en
ISSN 0003-6951
期刊性質
收錄於 SCI
產學合作
通訊作者
審稿制度
國別
公開徵稿
出版型式 紙本
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