A Micromachined Microwave Switch Fabricated by the Complementary Metal Oxide Semiconductor Post-Process of Etching Silicon Dioxide
學年 93
學期 1
出版（發表）日期 2005-01-01
作品名稱 A Micromachined Microwave Switch Fabricated by the Complementary Metal Oxide Semiconductor Post-Process of Etching Silicon Dioxide
作品名稱（其他語言）
著者 Dai, Ching-liang; Peng, Hsuan-jung; Liu, Mao-chen; Wu, Chyan-chyi; Hsu, Heng-ming; 楊龍杰; Yang, Lung-jieh
單位 淡江大學機械與機電工程學系
出版者 Japan Society of Applied Physics
著錄名稱、卷期、頁數 Japanese Journal of Applied Physics 44(9A), pp.6804-6809
摘要 In this study, we investigate the fabrication of a micromachined microwave switch using the commercial 0.35 μm double polysilicon four metal (DPFM) complementary metal oxide semiconductor (CMOS) process and the post-process of only one maskless wet etching. The post-process has merits of easy execution and low cost. The post-process uses an etchant (silox vapox III) to etch the silicon dioxide layer to release the suspended structures of the microwave switch. The microwave switch is a capacitive type that is actuated by an electrostatic force. The components of the microwave switch are coplanar waveguide (CPW) transmission lines, a suspended membrane and supported springs. Experimental results show that the driving voltage of the switch is about 17 V. The switch has an insertion loss of −2.5 dB at 50 GHz and an isolation of −15 dB at 50 GHz.
關鍵字 microwave switch; CMOS; post-process
語言 en
ISSN 0021-4922 1347-4065
期刊性質 國外
收錄於 SCI
產學合作
通訊作者
審稿制度
國別 JPN
公開徵稿
出版型式 紙本
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