| X-ray absorption spectroscopic study on Ti/n-GaN | |
|---|---|
| 學年 | 94 |
| 學期 | 1 |
| 出版（發表）日期 | 2005-10-01 |
| 作品名稱 | X-ray absorption spectroscopic study on Ti/n-GaN |
| 作品名稱（其他語言） | |
| 著者 | Kumar, M. Senthil; Kumar, V. Sures; Asokan, K.;Chiou, J. W. ;Jan, J. C.; Pong, Way-faung ;Kumar, J. |
| 單位 | 淡江大學物理學系 |
| 出版者 | Weinheim: Wiley - VCH Verlag GmbH & Co. KGaA |
| 著錄名稱、卷期、頁數 | Physica Status Solidi. A: Applications and Materials Science 202(14), pp.R161-R163 |
| 摘要 | Formation of low resistance and thermally stable ohmic contacts to GaN is of considerable importance for device applications. Several metallization schemes for ohmic contacts to n-GaN with low contact resistance have been proposed and investigated by different techniques. We investigate 500 Å Ti/n-GaN contacts of as-deposited and rapid furnace annealed at 900 °C for 30 s, using X-ray diffraction pattern, I–V measurements, and X-ray absorption near edge spectra at Ti K- and L3,2-edges and elucidate the mechanism responsible for the high ohmic behaviour. These measurements indicate the formation of an interfacial TixN layer and intermetallic alloys of Ti and Ga at the Ti/n-GaN interface upon high temperature annealing. |
| 關鍵字 | |
| 語言 | en |
| ISSN | 1862-6300 |
| 期刊性質 | 國外 |
| 收錄於 | SCI |
| 產學合作 | |
| 通訊作者 | |
| 審稿制度 | |
| 國別 | DEU |
| 公開徵稿 | |
| 出版型式 | 紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27739 ) |
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