| Change of Structural Behaviors of Organo-Silane Exposed Graphene Nanoflakes | |
|---|---|
| 學年 | 98 |
| 學期 | 1 |
| 出版（發表）日期 | 2010-01-01 |
| 作品名稱 | Change of Structural Behaviors of Organo-Silane Exposed Graphene Nanoflakes |
| 作品名稱（其他語言） | |
| 著者 | Pao, C. W.; Ray, S. C.; Tsai, H. M.; Chen, Y. S.; Chen, H.-C.; Lin, I.-N.; Pong, W. F.; Chiou, J. W.; Tsai, M.-H.; Shang,N. G.; Papakonstantinou,P.; Guo, J.-H. |
| 單位 | 淡江大學物理學系 |
| 出版者 | Washington, DC: American Chemical Society |
| 著錄名稱、卷期、頁數 | The Journal of Physical Chemistry C 114(18), pp.8161-8166 |
| 摘要 | The electronic structures of graphene nanoflakes (GNFs) exposed to an organo-silane precursor [tetramethylsilane, TMS, Si(CH3)4] were studied using electron field emission (EFE), Raman spectroscopy, X-ray absorption near-edge structure (XANES), X-ray photoelectron spectroscopy (XPS), X-ray emission spectroscopy (XES), and first-principles calculation. The results of XANES, XPS, and Raman spectroscopy indicate that the silyl radical strong covalent bonds were formed in GNFs, which induced local structural relaxations and enhanced sp3 hybridization. Comparison of calculated electronic structure, XANES, and XES spectra of Sitreated GNFs suggests that the Si atom substitutes one 3-fold coordinated C atom in a given graphene layer and relaxes outward to form sp3 bonding with another C atom in the adjacent graphene layer. The EFE measurements show an increase in the turn-on electric field with the increase of the Si content, which suggests an enhancement of the nonmetallic sp3 bonding |
| 關鍵字 | |
| 語言 | en |
| ISSN | 1932-7447 |
| 期刊性質 | 國外 |
| 收錄於 | SCI |
| 產學合作 | |
| 通訊作者 | Ray, S. C.; Pong, W. F. |
| 審稿制度 | |
| 國別 | USA |
| 公開徵稿 | |
| 出版型式 | 紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/58283 ) |
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