Growth and characterization of InN thin film by metal-organic vcapor phase epitaxy (MOVPE) on different buffers
學年 96
學期 2
出版（發表）日期 2008-05-13
作品名稱 Growth and characterization of InN thin film by metal-organic vcapor phase epitaxy (MOVPE) on different buffers
作品名稱（其他語言）
著者 Chang, P. H.; Wei, Y. Y.; Chen, C. W.; Reng, H. C.; Ling, D. C.; Chen, N. C.; Chang, C. A.
單位 淡江大學物理學系
出版者 Wiley
著錄名稱、卷期、頁數 Physica status solidi (c)5(6), pp.1594-1599
摘要 Superconductivity and transport characteristics of high-quality wurtzite-structured In- and N-polarity InN thin film on sapphire substrate by metal-organic vapor phase epitaxy (MOVPE) were presented in this study. Single-crystalline InN films with various n-typed carrier concentrations (n = 1 ∼ 6 × 1019cm–3) resulting from nitrogen vacancy (VN) were obtained by changing buffer layers. Superconductivity phase transition at Tc,onset around 3.5 K are observed in both In- and N-polarity InN. This strongly suggest that the superconduc- tivity originate in the In-VN(and/or VN+)-In chain in the a-b plane of InN thin film. Our experimental results show that the nitrogen vacancy in a-b plane of InN thin film must play important roles for the quasi-2D superconducting network in InN system. Temperature - dependent resistance broadening of InN at T < Tc,onset(K) under zero magnetic fields was observed and can be expressed by Kosterlitz-Thouless transition. Details were discussed in this paper. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
關鍵字 61.05.cp;68.55.−a;73.61.Ey;74.78.Db;81.05.Ea;81.15.Kk
語言 en
ISSN 1610-1642
期刊性質 國外
收錄於 SCI
產學合作
通訊作者
審稿制度 是
國別 USA
公開徵稿
出版型式 電子版
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