Breakdown of Rigid-Unit vibrations in layered semiconductors under pressure : application to germanium sulfide
學年 83
學期 2
出版（發表）日期 1995-07-01
作品名稱 Breakdown of Rigid-Unit vibrations in layered semiconductors under pressure : application to germanium sulfide
作品名稱（其他語言）
著者 Hsueh, H.C.
單位 淡江大學物理學系
出版者
著錄名稱、卷期、頁數 Europhysics letters 31, pp.151
摘要 A combination of high-sensitivity Raman scattering and ab initio computer simulations is used to explore the lattice dynamics of the prototypical layered semiconductor GeS under hydrostatic pressure. The observed and calculated pressure responses of the Ag layer shear mode are in excellent agreement over the entire pressure range of the experiments (0 to 50 kbar). Examination of the calculated phonon eigenvectors reveals that the "rigid-layer" model is an appropriate description of the lattice dynamics only under near-ambient-pressure conditions and that substantial mode admixture occurs under compression.
關鍵字
語言 en
ISSN 0295-5075 1286-4854
期刊性質 國外
收錄於
產學合作
通訊作者
審稿制度 否
國別 FRA
公開徵稿
出版型式 ,電子版,紙本
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