| Compression Mechanisms in Highly Anisotropic Semiconductors | |
|---|---|
| 學年 | 87 |
| 學期 | 1 |
| 出版（發表）日期 | 1999-01-01 |
| 作品名稱 | Compression Mechanisms in Highly Anisotropic Semiconductors |
| 作品名稱（其他語言） | |
| 著者 | 薛宏中; Hsueh, H. C.; Crain, J. |
| 單位 | 淡江大學物理學系 |
| 出版者 | Wiley-Blackwell |
| 著錄名稱、卷期、頁數 | Physica Status Solidi. B, Basic research 211(1), pp.365-372 |
| 摘要 | We examine in detail the effect of hydrostatic compression on anisotropic semiconductors which, at ambient conditions, are characterised by the coexistence of both weak and strong cohesive forces. We focus on elucidating the response to compression of the structural, vibrational and electronic properties in quasi-two-dimensional layered materials and quasi-molecular solids. Results for layered IV–VI semiconductors (GeS and GeSe) and members of the quasi-molecular Group-V metal triiodides AsI3 are reported. Our methodology combines X-ray powder diffraction, Raman spectroscopy and ab initio electronic structure simulations. We demonstrate that compression in this class of material leads to complex compression mechanisms favouring more isotropically bonded phases, to gradual breakdown of low-frequency rigid unit vibrations and to unusual electron charge transfer effects which are reflected in non-monotonic variations of vibrational frequencies with pressure. |
| 關鍵字 | |
| 語言 | en |
| ISSN | 0370-1972 |
| 期刊性質 | 國內 |
| 收錄於 | SCI |
| 產學合作 | |
| 通訊作者 | H. C. Hsueh |
| 審稿制度 | 否 |
| 國別 | TWN |
| 公開徵稿 | |
| 出版型式 | ,電子版,紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27741 ) |
| SDGS | 優質教育,產業創新與基礎設施 |
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