Field emission enhancement in nitrogen-ion-implanted ultrananocrystalline diamond films
學年 96
學期 2
出版（發表）日期 2008-02-15
作品名稱 Field emission enhancement in nitrogen-ion-implanted ultrananocrystalline diamond films
作品名稱（其他語言）
著者 Joseph, P. T.; Tai, N. H.; Lee, C. Y.; Niu, H.; Pong, W. F.; Lin, I-nan
單位 淡江大學物理學系
出版者 College Park: American Institute of Physics (AIP)
著錄名稱、卷期、頁數 Journal of Applied Physics 103(4), pp.043720(7pages)
摘要 Enhanced electron field emission (EFE) properties for ultrananocrystalline diamond (UNCD) films grown on silicon substrate were achieved, especially due to the high dose N ion implantation. Secondary ion mass spectroscopy, Raman spectroscopy, and x-ray photoelectron spectroscopy measurements indicated that the N ion implantation first expelled H−, induced the formation of disordered carbon (or defect complex), and then induced the amorphous phase, as the ion implantation dose increased. The postimplantation annealing process healed the atomic defects, but converted the disordered carbon to a stable defect complex, and amorphous carbon into a more stable graphitic phase. The EFE characteristics of the high dose (>1015 ions/cm2) ion-implanted UNCD were maintained at an enhanced level, whereas those of the low dose (<1014 ions/cm2) ion-implanted ones were reverted to the original values after the annealing process. Ion implantation over a critical dose (1×1015 ions/cm2) was required to improve the EFE properties of UNCD films.
關鍵字
語言 en
ISSN 0021-8979 1089-7550
期刊性質
收錄於
產學合作
通訊作者 Lin, I-nan
審稿制度
國別
公開徵稿
出版型式 紙本 電子版
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