Comparison of electronic structures of RuO<sub>2</sub> and IrO<sub>2</sub> nanorods investigated by x-ray absorption and scanning photoelectron microscopy
學年 95
學期 1
出版（發表）日期 2007-01-22
作品名稱 Comparison of electronic structures of RuO<sub>2</sub> and IrO<sub>2</sub> nanorods investigated by x-ray absorption and scanning photoelectron microscopy
作品名稱（其他語言）
著者 Tsai, H. M.; Babu, P. D.; Pao, C. W.; Chiou, J. W.; Jan, J. C.; Krishna Kumar, K. P.; 錢凡之; Chien, F. Z.; 彭維鋒; Pong, Way-faung; Tsai, M. H.; Chen, C. H.; Jang, L. Y.; Lee, J. F.; Chen, R. S.; Huang, Y. S.; Tsai, D. S.
單位 淡江大學物理學系
出版者 American Institute of Physics (AIP)
著錄名稱、卷期、頁數 Applied Physics Letters 91(4), pp.042108
摘要 Through-wafer interconnects by aligned carbon nanotube for three-dimensional stack integrated chip packaging applications have been reported in this letter. Two silicon wafers are bonded together by tetra-ethyl-ortho-silicate. The top wafer 100 m thick with patterned through-holes allows carbon nanotubes to grow vertically from the catalyst layer Fe on the bottom wafer. By using thermal chemical vapor deposition technique, the authors have demonstrated the capability of growing aligned carbon nanotube bundles with an average length of 140 m and a diameter of 30 m from the through holes. The resistivity of the bundles is measured to be 0.0097 cm by using a nanomanipulator.
關鍵字
語言 en
ISSN 0003-6951
期刊性質 國內
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產學合作
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審稿制度
國別
公開徵稿
出版型式 紙本
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