| Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si:DLC) thin films | |
|---|---|
| 學年 | 94 |
| 學期 | 1 |
| 出版（發表）日期 | 2005-10-06 |
| 作品名稱 | Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si:DLC) thin films |
| 作品名稱（其他語言） | |
| 著者 | Ray, S. C.; Okpalugo, T. I. T.; Pao, C. W.; Tsai, H. M.; Chiou, J. W.; Jan, J. C.; 彭維鋒; Pong, W. F.; Papakonstantinou, P.; McLaughlin, J. A.; Wang, W. J. |
| 單位 | 淡江大學物理學系 |
| 出版者 | Elsevier |
| 著錄名稱、卷期、頁數 | Materials Research Bulletin 40(10), pp.1757-1764 |
| 摘要 | We have investigated the electronic and bonding structure using Fourier-transform infra-red (FT-IR) spectra and studied photoluminescence (PL) from micro-Raman spectra analysis of a-C:H:Si (Si:DLC) thin films deposited by plasma enhanced chemical vapour deposition (PECVD) method. Tetramethylsilane [Si(CH3)4, TMS] vapour was used as Silicon precursor and a bias voltage of 400 V was applied during deposition. It is observed from FT-IR spectra that with increasing TMS flow rate, the intensity of Sisingle bondHn and Csingle bondHn modes is increased significantly. PL study indicates that the PL is increased and that the PL peak position is shifted towards lower energy when the TMS flow rate increases gradually during deposition. |
| 關鍵字 | A. Thin film;B. Vapour deposition;C. Infrared spectroscopy;D. Luminescence |
| 語言 | en |
| ISSN | 0025-5408 |
| 期刊性質 | 國內 |
| 收錄於 | |
| 產學合作 | |
| 通訊作者 | |
| 審稿制度 | 否 |
| 國別 | TWN |
| 公開徵稿 | |
| 出版型式 | ,電子版 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27678 ) |
GoogleAnalytics