Electronic structure of GaN nanowire studied by x-ray-absorption spectroscopy and scanning photoelectron microscopy
學年 91
學期 2
出版（發表）日期 2003-06-02
作品名稱 Electronic structure of GaN nanowire studied by x-ray-absorption spectroscopy and scanning photoelectron microscopy
作品名稱（其他語言）
著者 Chiou, J.W.; Jan, J.C.; Tsai, H.M.; Pong, W.F.; Tsai, M.-H.; Hong, I.-H.; Klauser, R.; Lee, J.-F.; Hsu, C.W.; Lin, H.M.; Chen, C.-C.; Shen, C.H.; Chen, L.C.; Chen, K.H.
單位 淡江大學物理學系
出版者 College Park: American Institute of Physics (AIP)
著錄名稱、卷期、頁數 Applied Physics Letters 82(22), pp.3949-3951
摘要 X-ray absorption near edge structure (XANES) and scanning photoelectron microscopy (SPEM) measurements have been employed to obtain information on the electronic structures of the GaN nanowires and thin film. The comparison of the XANES spectra revealed that the nanowires have a smaller (larger) N (Ga) K edge XANES intensity than that of the thin film, which suggests an increase (decrease) of the occupation of N 2p (Ga 4p) orbitals and an increase of the N (Ga) negative (positive) effective charge in the nanowires. The SPEM spectra showed that the Ga 3d band for the nanowires lies about 20.8 eV below the Fermi level and has a chemical shift of about -0.9 eV relative to that of the thin film.
關鍵字
語言 en
ISSN 0003-6951
期刊性質 國外
收錄於
產學合作
通訊作者 Pong, W.F
審稿制度
國別 USA
公開徵稿
出版型式 紙本
相關連結

機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27563 )

機構典藏連結