Angle-dependent x-ray absorption spectroscopy study of Zn-doped GaN
學年 91
學期 1
出版（發表）日期 2002-10-28
作品名稱 Angle-dependent x-ray absorption spectroscopy study of Zn-doped GaN
作品名稱（其他語言）
著者 Chiou, J. W.; Mookerjee, S.; Rao, K. V. R.; Jan, J. C.; Tsai, H. M.; Asokan, K.; Pong, W. F.; Chien, F. Z.; Tsai, M. H.; Chang, Y. K.; Chen, Y. Y.; Lee, J. F.; Lee, C. C.; Chi, G. C.
單位 淡江大學物理學系
出版者 College Park: American Institute of Physics (AIP)
著錄名稱、卷期、頁數 Applied Physics Letters 81(18), pp.3389-3391
摘要 As-grown and Zn-implanted wurtzite GaN samples have been studied by angle-dependent x-ray absorption near edge structure (XANES) measurements at the N and Ga K-edges and the Ga L3-edge. The angle dependence of the XANES spectra shows that the Ga–N bonds lying in the bilayer have lower energies than bonds along the c-axis, which can be attributed to the polar nature of the GaN film. The comparison of the Ga L3-edge XANES spectra of as-grown and Zn-doped GaN reveals significant dopant induced enhancement of near-edge Ga d-derived states. © 2002 American Institute of Physics.
關鍵字
語言 en
ISSN 0003-6951
期刊性質 國外
收錄於 SCI
產學合作
通訊作者 Pong, W. F.
審稿制度
國別 USA
公開徵稿
出版型式 紙本
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