期刊論文
| 學年 | 113 |
|---|---|
| 學期 | 1 |
| 出版（發表）日期 | 2024-12-23 |
| 作品名稱 | Analyses of the Properties of the NiO-Doped Ga2O3 Wide-Bandgap Semiconductor Thin Film |
| 作品名稱（其他語言） | |
| 著者 | Cheng-Fu Yang; En-Chi Tsao; Yi-Wen Wang; Hsin-Pei Lin; Teen-Hang Meen; Shu-Han Liao |
| 單位 | |
| 出版者 | |
| 著錄名稱、卷期、頁數 | Coatings 14(12), 1615 |
| 摘要 | The study began by pre-sintering Ga2O3 powder at 950 °C for 1 h, followed by the preparation of a mixture of Ga2O3 and 12 at% NiO powders to fabricate a source target material. An electron beam (e-beam) system was then used to deposit NiO-doped Ga2O3 thin films on Si substrates. X-ray diffraction (XRD) analyses revealed that the pre-sintered Ga2O3 at 950 °C exhibited β-phase characteristics, and the deposited NiO-doped Ga2O3 thin films exhibited an amorphous phase. After the deposition of the NiO-doped Ga2O3 thin films, they were divided into two portions. One portion underwent various analyses directly, while the other was annealed at 500 °C in air before being analyzed. Field-emission scanning electron microscopy (FESEM) was utilized to process the surface observation, and the cross-sectional observation was primarily used to measure the thickness of the NiO-doped Ga2O3 thin films. UV-Vis spectroscopy was used to calculate the bandgap by analyzing the transmission spectra, while the Agilent B1500A was employed to measure the I-V characteristics. Hall measurements were also performed to assess the mobility, carrier concentration, and resistivity of both NiO-doped Ga2O3 thin films. The first innovation is that the 500 °C-annealed NiO-doped Ga2O3 thin films exhibited a larger bandgap and better electrical conductivity. The manuscript provides an explanation for the observed increase in the bandgap. Another important innovation is that the 500 °C-annealed NiO-doped Ga2O3 thin films revealed a high-energy bandgap of 4.402 eV. The third innovation is that X-ray photoelectron spectroscopy (XPS) analyses of the Ga2p3/2, Ga2p1/2, Ga3d, Ni2p3/2, and O1s peaks were conducted to further investigate the reasons behind the enhanced electrical conductivity of the 500 °C-annealed NiO-doped Ga2O3 thin films. |
| 關鍵字 | NiO-doped Ga2O3; wide-bandgap semiconductor; UV-Vis spectroscopy; electrical conductivity; X-ray photoelectron spectroscopy |
| 語言 | en_US |
| ISSN | 2079-6412 |
| 期刊性質 | 國外 |
| 收錄於 | SCI |
| 產學合作 | |
| 通訊作者 | |
| 審稿制度 | 否 |
| 國別 | CHE |
| 公開徵稿 | |
| 出版型式 | ,電子版 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/127514 ) |