期刊論文
| 學年 | 109 |
|---|---|
| 學期 | 2 |
| 出版（發表）日期 | 2021-03-16 |
| 作品名稱 | Electrically programmable magnetoresistance in AlOx‑based magnetic tunnel junctions |
| 作品名稱（其他語言） | |
| 著者 | Jhen‑Yong Hong; Chen‑Feng Hung; Kui‑Hon Ou Yang; Kuan‑Chia Chiu; Dah‑Chin Ling; Wen‑Chung Chiang; Minn‑Tsong Lin |
| 單位 | |
| 出版者 | |
| 著錄名稱、卷期、頁數 | Scientific Reports 11, 6027 (7 pages) |
| 摘要 | We report spin-dependent transport properties and I–V hysteresis characteristics in an AlOx-based magnetic tunnel junction (MTJ). The bipolar resistive switching and the magnetoresistances measured at high resistance state (HRS) and low resistance state (LRS) yield four distinctive resistive states in a single device. The temperature dependence of resistance at LRS suggests that the resistive switching is not triggered by the metal filaments within the AlOx layer. The role played by oxygen vacancies in AlOx is the key to determine the resistive state. Our study reveals the possibility of controlling the multiple resistive states in a single AlOx-based MTJ by the interplay of both electric and magnetic fields, thus providing potential applications for future multi-bit memory devices. |
| 關鍵字 | Magnetic properties and materials;Spintronics |
| 語言 | en_US |
| ISSN | 2045-2322 |
| 期刊性質 | 國外 |
| 收錄於 | SCI SSCI |
| 產學合作 | |
| 通訊作者 | |
| 審稿制度 | 是 |
| 國別 | GBR |
| 公開徵稿 | |
| 出版型式 | ,電子版 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/120680 ) |