期刊論文
學年 | 109 |
---|---|
學期 | 1 |
出版(發表)日期 | 2020-10-01 |
作品名稱 | Applications of p-n Homojunction ZnO Nanowires to One-Diode One-Memristor RRAM Arrays |
作品名稱(其他語言) | |
著者 | Jui-Yuan Chen; Min-Ci Wu; Yi-Hsin Ting; Wei-Che Lee; Ping-Hung Yeh; Wen-Wei Wu |
單位 | |
出版者 | |
著錄名稱、卷期、頁數 | Scripta Materialia 187, p.439-444 |
摘要 | Nanowire (NW) structure is superior at defining the direction of device due to its one-dimension feature. In this work, the p-n ZnO NWs were successfully synthesized, and were able to vertically grow on Ta2O5 substrate. Thus, the well-performed Au/ p-n ZnO NWs/ Ta2O5/ Au one-diode one-memoristor device was fabricated. The p-n ZnO NWs not only exhibited excellent rectifying behavior, but also played the role of oxygen storing during filaments formation. Therefore, the low-leakage device aimed to build high-density crossbar arrays which was required for accelerating the combination of 5G with AI in near future applications. |
關鍵字 | nanowires;RRAM;diode;ZnO;homojunction |
語言 | en |
ISSN | 1872-8456 |
期刊性質 | 國外 |
收錄於 | SCI |
產學合作 | |
通訊作者 | |
審稿制度 | 否 |
國別 | GBR |
公開徵稿 | |
出版型式 | ,電子版,紙本 |
相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/118827 ) |