期刊論文
| 學年 | 108 |
|---|---|
| 學期 | 1 |
| 出版（發表）日期 | 2019-09-01 |
| 作品名稱 | Photoluminescence of CuInSe2/GaN and CuInSe2/InN |
| 作品名稱（其他語言） | |
| 著者 | Phoebe Nicole G. Perez; Cheng-Chang Yu; Cheng-Hung Shih; Chen-Chi Yang; Emmanuel A. Florido; Dah-Chin Ling; Der-Jun Jang |
| 單位 | |
| 出版者 | |
| 著錄名稱、卷期、頁數 | Journal of Luminescence 213, p.364-369 |
| 摘要 | The power and temperature dependent photoluminescence (PL) of epitaxially grown In-rich CuInSe2 (CIS) and Cu-rich CIS deposited on N-polar GaN and InN were investigated in this paper. The In-rich CIS/GaN has two PL emissions characterized by a donor-acceptor pair (DAP) peak at 0.92 eV and an excitonic peak at 1.08/1.1 eV. On the other hand, the Cu-rich CIS/GaN has four PL emissions characterized by two DAP peaks at 0.86 eV and 0.94 eV, free-to-bound recombination peak at 0.97 eV and an excitonic peak at 1.03 eV. Identification of these defects in the CIS absorber layer is crucial for the improvement of the device efficiency. The PL emission of the CIS/InN closely resembles that of the Cu-rich CIS/GaN. For all the samples, the PL intensity increased with excitation power while the PL intensity decreased with temperature. The obtained power coefficients and activation energies support the proposed mechanism causing the luminescence. The defects present in CIS/GaN and CIS/InN were also identified. The results from this study are consistent with those of CIS single crystals and show that the CIS absorber layer can be incorporated with III-nitride materials, and its absorption can be extended beyond the spectrum covered by plain CIS. |
| 關鍵字 | Photoluminescence;Copper indium diselenide;Gallium nitride;Indium nitride;Solar cell absorber |
| 語言 | en_US |
| ISSN | |
| 期刊性質 | 國外 |
| 收錄於 | SCI |
| 產學合作 | |
| 通訊作者 | Der-Jun Jang |
| 審稿制度 | 是 |
| 國別 | NLD |
| 公開徵稿 | |
| 出版型式 | ,電子版,紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/116771 ) |