期刊論文
| 學年 | 106 |
|---|---|
| 學期 | 1 |
| 出版（發表）日期 | 2017-11-25 |
| 作品名稱 | Luminescent properties and microstructure of SiC doped AlON: Eu2+ phosphors |
| 作品名稱（其他語言） | |
| 著者 | Liang-Jun Yin*, Chao Cai, Hui Wang, Yu-Jie Zhao, Hao Van Bui, Xian Jian, Hui Tang, Xin Wang, Long-Jiang Deng, Xin Xu, Ming-Hsien Lee* |
| 單位 | |
| 出版者 | |
| 著錄名稱、卷期、頁數 | Journal of Alloys and Compounds 725(25), p.217-226 |
| 摘要 | Superior thermal quenching and degradation of phosphors are required for long lifetime lighting devices, such as light-emitting diodes, which can be realized through composition modification. Here, Al-N bonds in AlON: Eu2+ phosphors are substituted by higher bond order of Si-C. Photoluminescence (PL) results show thermal quenching (at 150 °C) and thermal degradation (after 600 °C treatment in air) are improved by 5% and 8% with a small decrease of PL intensity in 5% SiC doped AlON: Eu2+ phosphor. To explain these observations, first-principles computational study was performed to understand the Si and C configuration in AlON:Eu2+. The calculations reveal that Si and C elements are not randomly distributed in AlON lattice. It was found that Si prefers occupying tetrahedral sites (Td-Si) and the insertion of C in Td-Si is always energetically favorable, which results in the formation of SiC4 and SiNC3 clusters. Thus, the Al-N substitution by Si-C induces a stronger local structure, which accounts for the emission redshift and better thermal stability. |
| 關鍵字 | Oxynitride;Photoluminescence;Rare-earths;First principles theory |
| 語言 | en |
| ISSN | |
| 期刊性質 | 國外 |
| 收錄於 | SCI |
| 產學合作 | |
| 通訊作者 | |
| 審稿制度 | 否 |
| 國別 | NLD |
| 公開徵稿 | |
| 出版型式 | ,紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/111891 ) |