期刊論文
| 學年 | 84 |
|---|---|
| 學期 | 2 |
| 出版（發表）日期 | 1996-06-01 |
| 作品名稱 | Vibrational properties of the layered semiconductor germanium sulfide under hydrostatic pressure: Theory and experiment |
| 作品名稱（其他語言） | |
| 著者 | Hsueh, H. C.; M. C. Warren; H. Vass; G. J. Ackland; S. J. Clark; J. Crain |
| 單位 | |
| 出版者 | |
| 著錄名稱、卷期、頁數 | Phys. Rev. B 53(22), pp.14806-14817 |
| 摘要 | The structural and vibrational properties of the prototypical layered semiconductor germanium sulfide (GeS) have been studied under pressure using a combination of high-resolution x-ray powder diffraction, Raman scattering, and ab initio simulation. The theoretically and experimentally determined pressure response of the static and dynamical properties are in good agreement with each other. No structural phase transformation is found up to 94 kbar. Inspection of the calculated eigenvectors of zone center phonons at several pressures indicates that the validity of the rigid-layer mode approximation is appropriate only at near-ambient pressure conditions and breaks down under compression. |
| 關鍵字 | |
| 語言 | en |
| ISSN | |
| 期刊性質 | 國外 |
| 收錄於 | |
| 產學合作 | |
| 通訊作者 | |
| 審稿制度 | 否 |
| 國別 | USA |
| 公開徵稿 | |
| 出版型式 | ,電子版,紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/107889 ) |