期刊論文

學年 101
學期 2
出版(發表)日期 2013-02-01
作品名稱 Band Gap Engineering of Chemical Vapor Deposited Graphene by in Situ BN Doping
作品名稱(其他語言)
著者 Chang, Cheng-Kai; Satender Kataria; Kuo, Chun-Chiang; Abhijit Ganguly; Wang, Bo-Yao; Hwang, Jeong-Yuan; Huang, Kay-Jay; Yang, Wei-Hsun; Wang, Sheng-Bo; Chuang, Cheng-Hao; Chen, Mi; Huang, Ching-I; Pong, Way-Faung; Song, Ker-Jar; Chang, Shoou-Jinn; Guo, Jing-Hua; Tai, Yian; Masahiko Tsujimoto; Seiji Isoda; Chen, Chun-Wei; Chen, Li-Chyong; Chen, Kuei-Hsien
單位 淡江大學物理學系
出版者 Washington, DC: American Chemical Society
著錄名稱、卷期、頁數 ACS Nano 7(2), pp.1333–1341
摘要 Band gap opening and engineering is one of the high priority goals in the development of graphene electronics. Here, we report on the opening and scaling of band gap in BN doped graphene (BNG) films grown by low-pressure chemical vapor deposition method. High resolution transmission electron microscopy is employed to resolve the graphene and h-BN domain formation in great detail. X-ray photoelectron, micro-Raman, and UV–vis spectroscopy studies revealed a distinct structural and phase evolution in BNG films at low BN concentration. Synchrotron radiation based XAS-XES measurements concluded a gap opening in BNG films, which is also confirmed by field effect transistor measurements. For the first time, a significant band gap as high as 600 meV is observed for low BN concentrations and is attributed to the opening of the π–π* band gap of graphene due to isoelectronic BN doping. As-grown films exhibit structural evolution from homogeneously dispersed small BN clusters to large sized BN domains with embedded diminutive graphene domains. The evolution is described in terms of competitive growth among h-BN and graphene domains with increasing BN concentration. The present results pave way for the development of band gap engineered BN doped graphene-based devices.
關鍵字
語言
ISSN 1936-0851 1936-086X
期刊性質 國外
收錄於 SCI
產學合作
通訊作者
審稿制度
國別 USA
公開徵稿
出版型式 電子版,紙本
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