專書單篇
| 學年 | 101 |
|---|---|
| 學期 | 2 |
| 出版（發表）日期 | 2013-07-01 |
| 作品名稱 | Electronic and Optical Properties of Silicon Carbide Nanostructures |
| 作品名稱（其他語言） | |
| 著者 | Hsueh, Hung-Chung; Guo, Guang-Yu; Louie, Steven G. |
| 單位 | 淡江大學物理學系 |
| 出版者 | New York : Springer |
| 著錄名稱、卷期、頁數 | Silicon-based Nanomaterials, pp.139-159 |
| 摘要 | The electronic and optical properties of quasi-one-dimensional single-walled zigzag/armchair silicon-carbide nantotubes (SiC-NTs) as well as a two-dimensional SiC monolayer are investigated by ab initio methods. In order to elucidate many-electron effects on SiC nanosystems, we apply the ab initio many-body Green’s function approach to calculate the quasiparticle and optical properties of SiC nanostructures. The significant band gap correction, more than 1 eV, to the Kohn-Sham gap of density functional theory within the local density approximation of semiconducting SiC-NTs and a SiC monolayer is mainly due to the many-electron interaction effect, which is included in the GW approximation for the electron self energy. Furthermore, taking into account electron-hole interaction, the optical spectra of SiC-NTs are calculated by solving the Bethe-Salpeter equation (BSE) for the electron-hole amplitudes. Our GW+BSE calculations reveal the presence of excitons with a large binding energy as well as strong anisotropy in the optical properties in the low-dimensional SiC systems. The characteristics of the strongly bound electron-hole pairs or excitons in SiC nanostructures are also discussed in terms of the corresponding excitonic wavefunctions. |
| 關鍵字 | GW+BSE; Exciton; SiC nanostructure |
| 語言 | en_US |
| ISBN | 9781461481683 9781461481690 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/92513 ) |