期刊論文
| 學年 | 96 |
|---|---|
| 學期 | 2 |
| 出版（發表）日期 | 2008-05-13 |
| 作品名稱 | Growth and characterization of InN thin film by metal-organic vcapor phase epitaxy (MOVPE) on different buffers |
| 作品名稱（其他語言） | |
| 著者 | Chang, P. H.; Wei, Y. Y.; Chen, C. W.; Reng, H. C.; Ling, D. C.; Chen, N. C.; Chang, C. A. |
| 單位 | 淡江大學物理學系 |
| 出版者 | Wiley |
| 著錄名稱、卷期、頁數 | Physica status solidi (c)5(6), pp.1594-1599 |
| 摘要 | Superconductivity and transport characteristics of high-quality wurtzite-structured In- and N-polarity InN thin film on sapphire substrate by metal-organic vapor phase epitaxy (MOVPE) were presented in this study. Single-crystalline InN films with various n-typed carrier concentrations (n = 1 ∼ 6 × 1019cm–3) resulting from nitrogen vacancy (VN) were obtained by changing buffer layers. Superconductivity phase transition at Tc,onset around 3.5 K are observed in both In- and N-polarity InN. This strongly suggest that the superconduc- tivity originate in the In-VN(and/or VN+)-In chain in the a-b plane of InN thin film. Our experimental results show that the nitrogen vacancy in a-b plane of InN thin film must play important roles for the quasi-2D superconducting network in InN system. Temperature - dependent resistance broadening of InN at T < Tc,onset(K) under zero magnetic fields was observed and can be expressed by Kosterlitz-Thouless transition. Details were discussed in this paper. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| 關鍵字 | 61.05.cp;68.55.−a;73.61.Ey;74.78.Db;81.05.Ea;81.15.Kk |
| 語言 | en |
| ISSN | 1610-1642 |
| 期刊性質 | 國外 |
| 收錄於 | SCI |
| 產學合作 | |
| 通訊作者 | |
| 審稿制度 | 是 |
| 國別 | USA |
| 公開徵稿 | |
| 出版型式 | 電子版 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/79936 ) |