期刊論文
| 學年 | 96 |
|---|---|
| 學期 | 1 |
| 出版（發表）日期 | 2008-01-01 |
| 作品名稱 | Enhancement of Si-O hybridization in low-temperature grown ultraviolet photo-oxided SiO2 film observed by x-ray absorption and photoemission spectroscopy |
| 作品名稱（其他語言） | |
| 著者 | Tsai, H. M.; Ray, S. C.; Pao, C. W.; Chiou, J. W.; Huang, C. L.; Du, C. H.; Pong, W. F.; Tsai, M.-H.; Fukano, A.; Oyanagi, H. |
| 單位 | 淡江大學物理學系 |
| 出版者 | College Park: American Institute of Physics |
| 著錄名稱、卷期、頁數 | Journal of Applied Physics 103(1), pp.013704(4 pages) |
| 摘要 | The dielectric properties associated with the electronic and bonding structures of SiO2 films were examined using the Si L3,2- and O K-edge x-ray absorption near-edge structures (XANES) and valence-band photoemission spectroscopy (VB-PES) techniques. The Si L3,2- and O K-edge XANES measurements for the low-temperature grown UV-photon oxidized SiO2 (UV-SiO2) and the conventional high-temperature thermal-oxidized SiO2 (TH-SiO2) suggest enhancement of O 2p–Si 3p hybridization in UV-SiO2. VB-PES measurements reveal enhancement of nonbonding O 2p and O 2p–Si 3p hybridized states. The enhanced O 2p and Si 3p hybridization implies a shortening of the average Si–O bond length, which explains an increase of the density and the improvement of the dielectric property of UV-SiO2. |
| 關鍵字 | bond lengths; high-k dielectric thin films; permittivity; photoelectron spectra; silicon compounds; valence bands; XANES |
| 語言 | en |
| ISSN | 0021-8979 |
| 期刊性質 | 國外 |
| 收錄於 | SCI |
| 產學合作 | |
| 通訊作者 | Pong, W. F. |
| 審稿制度 | |
| 國別 | USA |
| 公開徵稿 | |
| 出版型式 | 紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27528 ) |