期刊論文
| 學年 | 99 |
|---|---|
| 學期 | 2 |
| 出版（發表）日期 | 2011-04-01 |
| 作品名稱 | Absorption-edge anisotropy of Cu2ZnSiQ4 (Q=S, Se) quaternary compound semiconductors |
| 作品名稱（其他語言） | |
| 著者 | Levcencoa, S.; Dumcencoa, D.; Huang, Y. S.; Arushanov, E.; Tezlevan, V.; Tiong, K. K.; Du, C. H. |
| 單位 | 淡江大學物理學系 |
| 出版者 | Amsterdam: Elsevier BV |
| 著錄名稱、卷期、頁數 | Journal of Alloys and Compounds 509(15), pp.4924–4928 |
| 摘要 | Polarization-dependent absorption characterization of Cu2ZnSiQ4 (Q = S, Se) quaternary single crystal compound semiconductors were carried out in the temperature range of 10–300 K. The absorption measurements were performed on the as grown basal plane with the normal along [2 1 0] and the axis c parallel to the long edge of the crystal platelet. A significant shift towards lower energy was observed in the absorption spectra of E⊥c polarization with respect to those corresponding to E⊥c polarization. A comprehensive analysis of the absorption spectra revealed that the absorption edges of the studied crystals are indirect allowed transitions. A schematic representation of the plausible assignments for the observed near band edge optical transitions for Cu2ZnSiQ4 was proposed. The variation of the indirect transition energies with temperature were analyzed by Varshni and Bose–Einstein expressions. The parameters that describe the temperature dependence of the indirect transition energies with different polarizations were evaluated and discussed. |
| 關鍵字 | Semiconductors; Optical properties; Optical spectroscopy |
| 語言 | en |
| ISSN | 0925-8388 |
| 期刊性質 | 國外 |
| 收錄於 | SCI |
| 產學合作 | |
| 通訊作者 | |
| 審稿制度 | |
| 國別 | NLD |
| 公開徵稿 | |
| 出版型式 | 紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/74868 ) |