期刊論文
| 學年 | 99 |
|---|---|
| 學期 | 1 |
| 出版（發表）日期 | 2011-01-01 |
| 作品名稱 | Low Resistivity Metal Silicide Nanowires with Extraordinarily High Aspect Ratio for Future Nanoelectronic Devices |
| 作品名稱（其他語言） | |
| 著者 | Chen, Sheng-Yu; Yeh, Ping-Hung; Wu, Wen-Wei; Chen, Uei-Shin; Chueh, Yu-Lun; Yang, Yu-Chen; Gwo, Shangir; Chen, Lih-Juann |
| 單位 | 淡江大學物理學系 |
| 出版者 | Washington, DC: American Chemical Society |
| 著錄名稱、卷期、頁數 | ACS Nano 5(11), pp.9202–9207 |
| 摘要 | One crucial challenge for the integrated circuit devices to go beyond the current technology has been to find the appropriate contact and interconnect materials. NiSi has been commonly used in the 45 nm devices mainly because it possesses the lowest resistivity among all metal silicides. However, for devices of even smaller dimension, its stability at processing temperature is in doubt. In this paper, we show the growth of high-quality nanowires of NiSi2, which is a thermodynamically stable phase and possesses low resistivity suitable for future generation electronics devices. The origin of low resistivity for the nanowires has been clarified to be due to its defect-free single-crystalline structure instead of surface and size effects. |
| 關鍵字 | nickel silicide; nanowires; low resistivity; high aspect ratio; epitaxy; nanoelectronic devices |
| 語言 | en |
| ISSN | 1936-0851; 1936-086X |
| 期刊性質 | 國外 |
| 收錄於 | |
| 產學合作 | |
| 通訊作者 | Chen, Lih-Juann; Wu, Wen-Wei |
| 審稿制度 | |
| 國別 | USA |
| 公開徵稿 | |
| 出版型式 | 紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/74848 ) |