期刊論文
學年 | 99 |
---|---|
學期 | 1 |
出版(發表)日期 | 2010-09-01 |
作品名稱 | Temperature-dependent study of the band-edge excitonic transitions of Cu2ZnSiS4 single crystals by polarization-dependent piezoreflectance |
作品名稱(其他語言) | |
著者 | Levcenco, S.; Dumcenco, D.; Huang, Y. S.; Arushanov, E.; Tezlevan, V.; Tiong, K. K.; Du, C. H. |
單位 | 淡江大學物理學系 |
出版者 | Amsterdam: Elsevier BV |
著錄名稱、卷期、頁數 | Journal of Alloys and Compounds 506(1), pp.46–50 |
摘要 | The temperature dependence of the band-edge excitonic transitions of Cu2ZnSiS4 single crystals were characterized by using polarization-dependent piezoreflectance (PzR) in the temperature range of 10–300 K. The PzR measurements were carried out on the as-grown basal plane with the normal along [2 1 0] and the c axis parallel to the long edge of the crystal platelet. The PzR spectra revealed polarization-dependent and features for E⊥c and Е||c polarization, respectively. Both and features are associated with the interband excitonic transitions at Γ point and can be explained by crystal-field splitting of valence band. From a detailed lineshape fit to the PzR spectra, the temperature dependence of the transition energies and broadening parameters of the band-edge excitons were determined accurately. The temperature dependence of near band-edge excitonic transition energies were analyzed using Varshni and Bose–Einstein expressions. The temperature dependence of the broadening parameter of excitonic features also has been studied in terms of a Bose–Einstein equation that contains the electron (exciton)–longitudinal optical phonon-coupling constant. The parameters that describe the temperature variation of the excitonic transition energies and broadening parameters were evaluated and discussed. |
關鍵字 | Semiconductors; Crystal growth; Optical properties; Optical spectroscopy |
語言 | en |
ISSN | 0925-8388 |
期刊性質 | 國外 |
收錄於 | SCI |
產學合作 | |
通訊作者 | Huang, Y. S. |
審稿制度 | |
國別 | NLD |
公開徵稿 | |
出版型式 | 紙本 |
相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/74833 ) |