期刊論文
| 學年 | 91 |
|---|---|
| 學期 | 1 |
| 出版（發表）日期 | 2002-11-01 |
| 作品名稱 | A Novel SiGe raised source/drain polycrystalline silicon thin-film transistor with improved on-current and larger breakdown voltage |
| 作品名稱（其他語言） | |
| 著者 | Yeh, P.H.; Peng, D.Z.; Chang, T.C.; Liu, C.F. |
| 單位 | 淡江大學物理學系 |
| 出版者 | |
| 著錄名稱、卷期、頁數 | Japanese Journal of Applied Physics 42, pp.1164-1167 |
| 摘要 | A novel poly-Si thin-film transistor with a self-aligned SiGe raised source/drain (SiGe-RSD TFT) has been proposed and fabricated. The SiGe-RSD regions were grown selectively by the ultra-high vacuum chemical vapor deposition (UHVCVD) process designed by us at 550°C. The resultant transistor structure features an ultra-thin active channel region (20 nm) and a self-aligned thick source/drain region (120 nm), and is ideally suited for optimum performance. Significant improvements in electrical characteristics, such as higher turn-on current, lower leakage current and higher drain breakdown voltage have been observed in the SiGe RSD TFT, compared to its conventional TFT counterpart. Moreover, the process is simple and no additional masks are necessary, which is consistent with conventional fabrication processes. |
| 關鍵字 | |
| 語言 | en |
| ISSN | 0021-4922 1347-4065 |
| 期刊性質 | 國外 |
| 收錄於 | |
| 產學合作 | |
| 通訊作者 | |
| 審稿制度 | 否 |
| 國別 | GBR |
| 公開徵稿 | |
| 出版型式 | ,電子版,紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/72750 ) |