期刊論文
| 學年 | 93 |
|---|---|
| 學期 | 2 |
| 出版（發表）日期 | 2005-06-01 |
| 作品名稱 | Fabrication of NiSi2 nanocrystals embedded in SiO2 with memory effect by oxidation of the amorphous Si/Ni/SiO2 structure |
| 作品名稱（其他語言） | |
| 著者 | Yeh, P.H.; Wu, H.H.; Yu, C.H.; Chen, L.J.; Liu, P.T. |
| 單位 | 淡江大學物理學系 |
| 出版者 | |
| 著錄名稱、卷期、頁數 | J. Vac. Sci. Technol. A 23, pp.851-855 |
| 摘要 | NiSi2 nanocrystals embedded in the SiO2 layer exhibiting a memory effect have been formed by dry oxidation of an amorphous Si/Ni/SiO2 structure at 900 degrees C. A pronounced capacitance-voltage hysteresis was observed with a memory window of I V under the 2 V programming voltage for the samples. For dry oxidation at 800 degrees C, no distinct memory effect was detected. The processing of the structure is compatible with the current manufacturing technology of the semiconductor industry. The structure represents a viable candidate for low-power nanoscaled nonvolatile memory devices. (c) 2005 American Vacuum Society. |
| 關鍵字 | |
| 語言 | en |
| ISSN | |
| 期刊性質 | 國內 |
| 收錄於 | |
| 產學合作 | |
| 通訊作者 | |
| 審稿制度 | 否 |
| 國別 | TWN |
| 公開徵稿 | |
| 出版型式 | ,電子版 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/72654 ) |