期刊論文
| 學年 | 93 |
|---|---|
| 學期 | 2 |
| 出版（發表）日期 | 2005-04-01 |
| 作品名稱 | Design and fabrication of RF MEMS switch by CMOS process |
| 作品名稱（其他語言） | |
| 著者 | Wu, C.C. |
| 單位 | 淡江大學機械與機電工程學系 |
| 出版者 | |
| 著錄名稱、卷期、頁數 | Tamkang Journal of Science and Engineering8(3), pp.197-202 |
| 摘要 | This work investigates the fabrication of a RF (ratio frequency) MEMS (micro elector mechanical system) switch using the standard 0.35 μm 2P4M (double polysilicon four metal) CMOS (complementary metal oxide semiconductor) process and the post-process. The switch is a capacitive type, which is actuated by an electrostatic force. The structure of the switch consists of a CPW (coplanar waveguides) transmission lines and a suspended membrane. The CPW lines and the membrane are the metal layers of the CMOS process. The main advantage of the RF switch is only needed a simple post-process, which is compatible with the CMOS process. The post-process uses an etchant, silox vapox Ⅲ, to etch oxide layer to release the suspended membrane and springs. Experiment results show that the pull-in voltage of the switch is about 17 V. The insertion loss and return loss in the range of 10 to 40 GHz are -2.5 dB and -13 dB, respectively. |
| 關鍵字 | CMOS;Post-process;MEMS;RF Switch |
| 語言 | en |
| ISSN | |
| 期刊性質 | 國內 |
| 收錄於 | |
| 產學合作 | |
| 通訊作者 | |
| 審稿制度 | 否 |
| 國別 | TWN |
| 公開徵稿 | |
| 出版型式 | ,電子版 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/65291 ) |